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Process Damage and Contamination Effects for Shallow Si Implanted GaAs
H. Baratte
, A. J. Fleischman
, G. J. Scilla
,
T. N. Jackson
, H. J. Hovel
, F. Cardone
Electrical Engineering
Materials Research Institute (MRI)
Research output
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›
peer-review
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Keyphrases
Gallium Arsenide
100%
Reactive Ion Etching
100%
Damage Effect
100%
Contamination Effect
100%
Sputter Deposition
50%
Annealing
33%
Surface Damage
33%
MESFET
33%
Submicron
16%
Impurities
16%
Low Sheet Resistance
16%
Hall Mobility
16%
Mobility Assessment
16%
Surface Contamination
16%
Self-bias
16%
Access Resistance
16%
SIMS Profile
16%
Fe-Cr-Ni
16%
Furnace Annealing
16%
Sheet Resistance
16%
Nicu
16%
Silicon Implants
16%
GaAs Surface
16%
SiNx
16%
Material Science
Gallium Arsenide
100%
Reactive Ion Etching
100%
Sputter Deposition
50%
Annealing
33%
Surface Damage
33%
Secondary Ion Mass Spectrometry
16%
Hall Mobility
16%
Silicon Implant
16%
Surface (Surface Science)
16%
Engineering
Gallium Arsenide
100%
Damage Process
100%
Damage Surface
33%
Sheet Resistance
33%
Implant
16%
Annealing Furnace
16%