Process-induced damage - a study of hydrogen and deuterium passivation

Sanjay Rangan; Srikanth Krishnan; S. Ashok

Process-induced damage - a study of hydrogen and deuterium passivation

Sanjay Rangan
, Srikanth Krishnan
, S. Ashok

Research output: Contribution to conference › Paper › peer-review

Abstract

A comparative study of the anneal efficiencies of deuterium (D₂) and hydrogen (H₂) in passivating the interface defects for plasma damaged MOSFET's has been done. Experimental results reveals that D₂ annealed devices show enhanced passivation of interface states (D_it), with a decrease in charge pumping current of 15% less than H₂ annealed devices. These devices also show higher transconductance (G_m) improvements and better threshold voltage (V_t) recovery, with increased hot carrier resistance, compared to the H₂ annealed ones. Temperature based anneals indicate that, while D_it and G_m improve with increasing temperature, V_t recovery is independent of it, indicating that the threshold voltage shifts are possibly due to oxide charge. The interface traps in the plasma-damaged device have been monitored using random telegraph signal (RTS), 1/f noise and charge pumping (CP).

Original language	English (US)
Pages	213-216
Number of pages	4
State	Published - 1998
Event	Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA Duration: Jun 4 1998 → Jun 5 1998

Other

Other	Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
City	Honolulu, HI, USA
Period	6/4/98 → 6/5/98

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{7b0637cbc49d4c08be2ae170397c4d57,

title = "Process-induced damage - a study of hydrogen and deuterium passivation",

abstract = "A comparative study of the anneal efficiencies of deuterium (D2) and hydrogen (H2) in passivating the interface defects for plasma damaged MOSFET's has been done. Experimental results reveals that D2 annealed devices show enhanced passivation of interface states (Dit), with a decrease in charge pumping current of 15\% less than H2 annealed devices. These devices also show higher transconductance (Gm) improvements and better threshold voltage (Vt) recovery, with increased hot carrier resistance, compared to the H2 annealed ones. Temperature based anneals indicate that, while Dit and Gm improve with increasing temperature, Vt recovery is independent of it, indicating that the threshold voltage shifts are possibly due to oxide charge. The interface traps in the plasma-damaged device have been monitored using random telegraph signal (RTS), 1/f noise and charge pumping (CP).",

author = "Sanjay Rangan and Srikanth Krishnan and S. Ashok",

year = "1998",

language = "English (US)",

pages = "213--216",

note = "Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 04-06-1998 Through 05-06-1998",

}

TY - CONF

T1 - Process-induced damage - a study of hydrogen and deuterium passivation

AU - Rangan, Sanjay

AU - Krishnan, Srikanth

AU - Ashok, S.

PY - 1998

Y1 - 1998

N2 - A comparative study of the anneal efficiencies of deuterium (D2) and hydrogen (H2) in passivating the interface defects for plasma damaged MOSFET's has been done. Experimental results reveals that D2 annealed devices show enhanced passivation of interface states (Dit), with a decrease in charge pumping current of 15% less than H2 annealed devices. These devices also show higher transconductance (Gm) improvements and better threshold voltage (Vt) recovery, with increased hot carrier resistance, compared to the H2 annealed ones. Temperature based anneals indicate that, while Dit and Gm improve with increasing temperature, Vt recovery is independent of it, indicating that the threshold voltage shifts are possibly due to oxide charge. The interface traps in the plasma-damaged device have been monitored using random telegraph signal (RTS), 1/f noise and charge pumping (CP).

AB - A comparative study of the anneal efficiencies of deuterium (D2) and hydrogen (H2) in passivating the interface defects for plasma damaged MOSFET's has been done. Experimental results reveals that D2 annealed devices show enhanced passivation of interface states (Dit), with a decrease in charge pumping current of 15% less than H2 annealed devices. These devices also show higher transconductance (Gm) improvements and better threshold voltage (Vt) recovery, with increased hot carrier resistance, compared to the H2 annealed ones. Temperature based anneals indicate that, while Dit and Gm improve with increasing temperature, Vt recovery is independent of it, indicating that the threshold voltage shifts are possibly due to oxide charge. The interface traps in the plasma-damaged device have been monitored using random telegraph signal (RTS), 1/f noise and charge pumping (CP).

UR - https://www.scopus.com/pages/publications/0032268625

UR - https://www.scopus.com/pages/publications/0032268625#tab=citedBy

M3 - Paper

AN - SCOPUS:0032268625

SP - 213

EP - 216

T2 - Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 4 June 1998 through 5 June 1998

ER -

Process-induced damage - a study of hydrogen and deuterium passivation

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this