Process monitoring using surface charge profiling (SCP) method

Jerzy Ruzyllo; P. Roman; J. Staffa; I. Kashkoush; E. Kamieniecki

Process monitoring using surface charge profiling (SCP) method

Jerzy Ruzyllo, P. Roman, J. Staffa, I. Kashkoush, E. Kamieniecki

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Armando Iturralde, Te-Hua Lin
Pages	162-173
Number of pages	12
State	Published - 1996
Event	Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II - Austin, TX, USA Duration: Oct 16 1996 → Oct 17 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2876

Other

Other	Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II
City	Austin, TX, USA
Period	10/16/96 → 10/17/96

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

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title = "Process monitoring using surface charge profiling (SCP) method",

abstract = "This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.",

author = "Jerzy Ruzyllo and P. Roman and J. Staffa and I. Kashkoush and E. Kamieniecki",

year = "1996",

language = "English (US)",

isbn = "0819422746",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "162--173",

editor = "Armando Iturralde and Te-Hua Lin",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II ; Conference date: 16-10-1996 Through 17-10-1996",

}

Ruzyllo, J, Roman, P, Staffa, J, Kashkoush, I & Kamieniecki, E 1996, Process monitoring using surface charge profiling (SCP) method. in A Iturralde & T-H Lin (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2876, pp. 162-173, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, Austin, TX, USA, 10/16/96.

Process monitoring using surface charge profiling (SCP) method. / Ruzyllo, Jerzy; Roman, P.; Staffa, J. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Armando Iturralde; Te-Hua Lin. 1996. p. 162-173 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2876).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Process monitoring using surface charge profiling (SCP) method

AU - Ruzyllo, Jerzy

AU - Roman, P.

AU - Staffa, J.

AU - Kashkoush, I.

AU - Kamieniecki, E.

PY - 1996

Y1 - 1996

N2 - This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

AB - This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.

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M3 - Conference contribution

AN - SCOPUS:0030414856

SN - 0819422746

SN - 9780819422743

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 162

EP - 173

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Iturralde, Armando

A2 - Lin, Te-Hua

T2 - Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II

Y2 - 16 October 1996 through 17 October 1996

ER -

Process monitoring using surface charge profiling (SCP) method

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

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