@inproceedings{841f1baf79b04820a144b0b4a2c40f8e,
title = "Processing and characterization of GaSb/High-k dielectric interfaces",
abstract = "The GaSb surface was exposed to various HCl-based chemical treatments in order to prepare it for high-k dielectric integration. The chemical and structural analysis was performed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The chemical analysis indicates the HCl effectively removes native oxide from GaSb surface and leaves it slightly antimony rich. The structural study reveals that the surface roughness increases upon the reexposure to air after the HCl-based surface treatment. Additional information was obtained from photo-conductance decay (PCD) measurements as well as C-V measurements of metal-Al2O3-GaSb capacitors.",
author = "E. Hwang and C. Eaton and S. Mujumdar and H. Madan and A. Ali and D. Bhatia and S. Datta and J. Ruzyllo",
year = "2011",
doi = "10.1149/1.3630839",
language = "English (US)",
isbn = "9781566779050",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "157--162",
booktitle = "Semiconductor Cleaning Science and Technology 12, SCST 12",
edition = "5",
note = "12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting ; Conference date: 10-10-2011 Through 11-10-2011",
}