Abstract
High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zrx, Ti 1-x)O3, and LaNiO3/Pb(Zrx,Ti 1-x)O3/LaNiO3 tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF2 isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.
Original language | English (US) |
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Pages | 189-192 |
Number of pages | 4 |
State | Published - 2005 |
Event | 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada Duration: Aug 23 2004 → Aug 27 2004 |
Other
Other | 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) |
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Country/Territory | Canada |
City | Montreal |
Period | 8/23/04 → 8/27/04 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering