Processing and properties of high aspect ratio ferroelectric structures

S. S.N. Bharadwaja; D. J. Won; H. Fang; V. Gopalan; S. Trolier-McKinstry; N. Saldanha; T. Mayer

Processing and properties of high aspect ratio ferroelectric structures

S. S.N. Bharadwaja, D. J. Won, H. Fang, V. Gopalan, S. Trolier-McKinstry, N. Saldanha, T. Mayer

Research output: Contribution to conference › Paper › peer-review

Abstract

High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zr_x, Ti _1-x)O₃, and LaNiO₃/Pb(Zr_x,Ti _1-x)O₃/LaNiO₃ tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF₂ isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.

Original language	English (US)
Pages	189-192
Number of pages	4
State	Published - 2005
Event	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada Duration: Aug 23 2004 → Aug 27 2004

Other

Other	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)
Country/Territory	Canada
City	Montreal
Period	8/23/04 → 8/27/04

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Bharadwaja, S. S. N., Won, D. J., Fang, H., Gopalan, V., Trolier-McKinstry, S., Saldanha, N., & Mayer, T. (2005). Processing and properties of high aspect ratio ferroelectric structures. 189-192. Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

@conference{eff283c8bc8c41ee9e015988efca4bb8,

title = "Processing and properties of high aspect ratio ferroelectric structures",

abstract = "High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zrx, Ti 1-x)O3, and LaNiO3/Pb(Zrx,Ti 1-x)O3/LaNiO3 tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF2 isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.",

author = "Bharadwaja, {S. S.N.} and Won, {D. J.} and H. Fang and V. Gopalan and S. Trolier-McKinstry and N. Saldanha and T. Mayer",

year = "2005",

language = "English (US)",

pages = "189--192",

note = "2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) ; Conference date: 23-08-2004 Through 27-08-2004",

}

Bharadwaja, SSN, Won, DJ, Fang, H, Gopalan, V , Trolier-McKinstry, S, Saldanha, N & Mayer, T 2005, 'Processing and properties of high aspect ratio ferroelectric structures', Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada, 8/23/04 - 8/27/04 pp. 189-192.

Processing and properties of high aspect ratio ferroelectric structures. / Bharadwaja, S. S.N.; Won, D. J.; Fang, H. et al.
2005. 189-192 Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Processing and properties of high aspect ratio ferroelectric structures

AU - Bharadwaja, S. S.N.

AU - Won, D. J.

AU - Fang, H.

AU - Gopalan, V.

AU - Trolier-McKinstry, S.

AU - Saldanha, N.

AU - Mayer, T.

PY - 2005

Y1 - 2005

N2 - High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zrx, Ti 1-x)O3, and LaNiO3/Pb(Zrx,Ti 1-x)O3/LaNiO3 tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF2 isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.

AB - High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zrx, Ti 1-x)O3, and LaNiO3/Pb(Zrx,Ti 1-x)O3/LaNiO3 tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF2 isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.

UR - http://www.scopus.com/inward/record.url?scp=28144448851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28144448851&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28144448851

SP - 189

EP - 192

T2 - 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)

Y2 - 23 August 2004 through 27 August 2004

ER -

Bharadwaja SSN, Won DJ, Fang H, Gopalan V , Trolier-McKinstry S, Saldanha N et al.. Processing and properties of high aspect ratio ferroelectric structures. 2005. Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

Processing and properties of high aspect ratio ferroelectric structures

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