Processing and properties of high aspect ratio ferroelectric structures

S. S.N. Bharadwaja, D. J. Won, H. Fang, V. Gopalan, S. Trolier-McKinstry, N. Saldanha, T. Mayer

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

High aspect ratio (≥ 50:1) ferroelectric structures are potentially applicable in areas such as tunable photonic devices, sensors and actuators. In this work high aspect ratio structures of Pb(Zrx, Ti 1-x)O3, and LaNiO3/Pb(Zrx,Ti 1-x)O3/LaNiO3 tri-layers were prepared by vacuum infiltration of meso-porous Si templates. Pyrolysis was done at 300 °C for 2 min. Reactive ion etching followed by XeF2 isotropic Si etching was utilized to release the embedded PZT structures from the Si template. The released structures were annealed at 700 °C for 1 min. in order to induce crystallization. These 2D ferroelectric photonic structures exhibited a TE- mode band gap in the infrared region between 4.0 - 4.4 microns in wavelength, which was found to be consistent with the theoretical photonic band gap calculations.

Original languageEnglish (US)
Pages189-192
Number of pages4
StatePublished - 2005
Event2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada
Duration: Aug 23 2004Aug 27 2004

Other

Other2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)
Country/TerritoryCanada
CityMontreal
Period8/23/048/27/04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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