Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition

M. P. Chudzik; R. Erck; M. T. Lanagan; C. R. Kannewurf

doi:10.1109/77.784675

Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition

M. P. Chudzik, R. Erck, M. T. Lanagan, C. R. Kannewurf

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Biaxially textured yttria (8 mol%)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa2Cu3Ox films. The 0.16-1.3 (im thick YSZ films were deposited by ebeam evaporation at rates of 1.2-3.2 A/see. Biaxially textured films were produced with an Ar/O: ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ionbombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane averagemisorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4°, respectively, on as-received substrates.

Original language	English (US)
Pages (from-to)	1490-1493
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	9
Issue number	2 PART 2
DOIs	https://doi.org/10.1109/77.784675
State	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{b80d104a79614e8c9a19fab402e81034,

title = "Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition",

abstract = "Biaxially textured yttria (8 mol%)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa2Cu3Ox films. The 0.16-1.3 (im thick YSZ films were deposited by ebeam evaporation at rates of 1.2-3.2 A/see. Biaxially textured films were produced with an Ar/O: ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ionbombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane averagemisorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4°, respectively, on as-received substrates.",

author = "Chudzik, {M. P.} and R. Erck and Lanagan, {M. T.} and Kannewurf, {C. R.}",

note = "Funding Information: Work supported in part by the US. Department of Energy (DOE), Energy Efficiency and Renewable Energy, as part of a DOE program to develop electric power technology, under Contract W-3 1-1 09-Eng-38, and by the National Science Foundation through the Science and Technology Center for Superconductivity (Grant No. DMR 91-2000).",

year = "1999",

doi = "10.1109/77.784675",

language = "English (US)",

volume = "9",

pages = "1490--1493",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition

AU - Chudzik, M. P.

AU - Erck, R.

AU - Lanagan, M. T.

AU - Kannewurf, C. R.

N1 - Funding Information: Work supported in part by the US. Department of Energy (DOE), Energy Efficiency and Renewable Energy, as part of a DOE program to develop electric power technology, under Contract W-3 1-1 09-Eng-38, and by the National Science Foundation through the Science and Technology Center for Superconductivity (Grant No. DMR 91-2000).

PY - 1999

Y1 - 1999

N2 - Biaxially textured yttria (8 mol%)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa2Cu3Ox films. The 0.16-1.3 (im thick YSZ films were deposited by ebeam evaporation at rates of 1.2-3.2 A/see. Biaxially textured films were produced with an Ar/O: ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ionbombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane averagemisorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4°, respectively, on as-received substrates.

AB - Biaxially textured yttria (8 mol%)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa2Cu3Ox films. The 0.16-1.3 (im thick YSZ films were deposited by ebeam evaporation at rates of 1.2-3.2 A/see. Biaxially textured films were produced with an Ar/O: ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ionbombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane averagemisorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4°, respectively, on as-received substrates.

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ER -

Processing dependence of biaxial texture in yttria-stabilized zirconia by lon-beam-assisted deposition

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