Processing of PZT piezoelectric thin films for microelectromechanical systems

Mary Hendrickson, Tao Su, Susan Trolier-McKinstry, Bernard J. Rod, Robert J. Zeto

Research output: Contribution to conferencePaperpeer-review

12 Scopus citations

Abstract

Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.

Original languageEnglish (US)
Pages683-686
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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