Abstract
Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.
Original language | English (US) |
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Pages | 683-686 |
Number of pages | 4 |
State | Published - Dec 1 1996 |
Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
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City | East Brunswick, NJ, USA |
Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering