Processing of PZT piezoelectric thin films for microelectromechanical systems

Mary Hendrickson; Tao Su; Susan Trolier-McKinstry; Bernard J. Rod; Robert J. Zeto

Processing of PZT piezoelectric thin films for microelectromechanical systems

Mary Hendrickson
, Tao Su
, Susan Trolier-McKinstry
, Bernard J. Rod
, Robert J. Zeto

Research output: Contribution to conference › Paper › peer-review

Abstract

Piezoelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl₂/CCl₄ mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.

Original language	English (US)
Pages	683-686
Number of pages	4
State	Published - Dec 1 1996
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Other

Other	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	8/18/96 → 8/21/96

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@conference{e627540bb2e44a57b0da26ebff94d005,

title = "Processing of PZT piezoelectric thin films for microelectromechanical systems",

abstract = "Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1\% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.",

author = "Mary Hendrickson and Tao Su and Susan Trolier-McKinstry and Rod, \{Bernard J.\} and Zeto, \{Robert J.\}",

year = "1996",

month = dec,

day = "1",

language = "English (US)",

pages = "683--686",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Processing of PZT piezoelectric thin films for microelectromechanical systems. / Hendrickson, Mary; Su, Tao; Trolier-McKinstry, Susan et al.
1996. 683-686 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Processing of PZT piezoelectric thin films for microelectromechanical systems

AU - Hendrickson, Mary

AU - Su, Tao

AU - Trolier-McKinstry, Susan

AU - Rod, Bernard J.

AU - Zeto, Robert J.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.

AB - Piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films for microelectromechanical systems (MEMS) were deposited on platinum coated silicon substrates by sol-gel processing using lead acetate trihydrate as the lead source. A thickness uniformity of better than 1% variation over 4 inches wafers was achieved. Auger depth profiling showed good compositional homogeneity through the film thickness, with some lead loss at the film surface. A PbO top layer on the top of PZT thin films gave improved properties. Grazing angle scanning XRD confirmed that the PbO top layer helped prevent the formation of a pyrochlore surface layer during crystallization. Work on reactive ion etching of the PZT thin films was also initiated. It was found that Cl2/CCl4 mixtures could be used to etch PZT with an etching rate of 100 to approximately 150 angstroms/min, and HCFC-124 with a rate of 320 angstroms/min.

UR - https://www.scopus.com/pages/publications/0030374431

UR - https://www.scopus.com/pages/publications/0030374431#tab=citedBy

M3 - Paper

AN - SCOPUS:0030374431

SP - 683

EP - 686

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Processing of PZT piezoelectric thin films for microelectromechanical systems

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this