TY - JOUR
T1 - Processing of reaction-bonded B4C-SiC composites in a single-mode microwave cavity
AU - Thuault, Anthony
AU - Marinel, Sylvain
AU - Savary, Etienne
AU - Heuguet, Romain
AU - Saunier, Sébastien
AU - Goeuriot, Dominique
AU - Agrawal, Dinesh
N1 - Funding Information:
Prof. Sylvain Marinel gratefully acknowledges the support of the government agencies: the DGA governmental institution , under contract “project ERE# 2011.60.052.00.470.7501 ”, and the Lower-Normandy Region Council (France). The authors want to thank explicitly Dr. François Barthelemy, from the DGA agency, for his valuable support.
PY - 2013/3
Y1 - 2013/3
N2 - In this study, the reaction sintering of boron carbide, which consists in doing reactive infiltration of molten silicon throughout a porous sample made of B4C and carbon graphite was investigated. Thus, it has been shown that a single-mode microwave cavity can be successfully used to produce reaction-bonded B4C-SiC composite. A specific package, consisting of a SiC based susceptor and a boron nitride based insulating container, was used to heat up the B4C-Si system using a single-mode microwaves cavity under an Ar-H2 atmosphere. Pore-free B4C-SiC composite successfully produced consists of a mixture of B4C and polygonal shaped β-SiC within a residual silicon matrix. The indentation technique permits to determine mechanical properties of the samples which are compared to those obtained conventionally. It appears that the average hardness (H≈22 GPa) value is quite constant all along the sample thickness which highlights good homogeneity of the samples obtained. Some aspects of the microstructure are also discussed and compared to those of samples conventionally obtained.
AB - In this study, the reaction sintering of boron carbide, which consists in doing reactive infiltration of molten silicon throughout a porous sample made of B4C and carbon graphite was investigated. Thus, it has been shown that a single-mode microwave cavity can be successfully used to produce reaction-bonded B4C-SiC composite. A specific package, consisting of a SiC based susceptor and a boron nitride based insulating container, was used to heat up the B4C-Si system using a single-mode microwaves cavity under an Ar-H2 atmosphere. Pore-free B4C-SiC composite successfully produced consists of a mixture of B4C and polygonal shaped β-SiC within a residual silicon matrix. The indentation technique permits to determine mechanical properties of the samples which are compared to those obtained conventionally. It appears that the average hardness (H≈22 GPa) value is quite constant all along the sample thickness which highlights good homogeneity of the samples obtained. Some aspects of the microstructure are also discussed and compared to those of samples conventionally obtained.
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U2 - 10.1016/j.ceramint.2012.07.047
DO - 10.1016/j.ceramint.2012.07.047
M3 - Article
AN - SCOPUS:84870293281
SN - 0272-8842
VL - 39
SP - 1215
EP - 1219
JO - Ceramics International
JF - Ceramics International
IS - 2
ER -