TY - GEN
T1 - Prolonging 3D NAND SSD lifetime via read latency relaxation
AU - Liu, Chun Yi
AU - Lee, Yunju
AU - Jung, Myoungsoo
AU - Kandemir, Mahmut Taylan
AU - Choi, Wonil
N1 - Funding Information:
This research is supported by NSF grants 1629915, 1629129, 1931531, 2008398, 1822923 and 1908793, and a grant from Intel. Jung is supported by NRF 2016R1C1B2015312, DOE DE-AC02-05CH 11231, KAIST Start-Up Grant (G01190015), KAIST IDEC, ETRI 20RS1100, and Samsung Electronics (G01200447/G01200368). Other product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Publisher Copyright:
© 2021 ACM.
PY - 2021/4/19
Y1 - 2021/4/19
N2 - The adoption of 3D NAND has significantly increased the SSD density; however, 3D NAND density-increasing techniques, such as extensive stacking of cell layers, can amplify read disturbances and shorten SSD lifetime. From our lifetime-impact characterization on 8 state-of-the-art SSDs, we observe that the 3D TLC/QLC SSDs can be worn-out by low read-only workloads within their warranty period since a huge amount of read disturbance-induced rewrites are performed in the background. To understand alternative read disturbance mitigation opportunities, we also conducted read-latency characterizations on 2 other SSDs without the background rewrite mechanism. The collected results indicate that, without the background rewriting, the read latencies of the majority of data become higher, as the number of reads on the data increases. Motivated by these two characterizations, in this paper, we propose to relax the short read latency constraint on the high-density 3D SSDs. Specifically, our proposal relies on the hint information passed from applications to SSDs that specifies the expected read performance. By doing so, the lifetime consumption caused by the read-induced writes can be reduced, thereby prolonging the SSD lifetime. The detailed experimental evaluations show that our proposal can reduce up to 56% of the rewrite-induced spent-lifetime with only 2% lower performance, under a file-server application.
AB - The adoption of 3D NAND has significantly increased the SSD density; however, 3D NAND density-increasing techniques, such as extensive stacking of cell layers, can amplify read disturbances and shorten SSD lifetime. From our lifetime-impact characterization on 8 state-of-the-art SSDs, we observe that the 3D TLC/QLC SSDs can be worn-out by low read-only workloads within their warranty period since a huge amount of read disturbance-induced rewrites are performed in the background. To understand alternative read disturbance mitigation opportunities, we also conducted read-latency characterizations on 2 other SSDs without the background rewrite mechanism. The collected results indicate that, without the background rewriting, the read latencies of the majority of data become higher, as the number of reads on the data increases. Motivated by these two characterizations, in this paper, we propose to relax the short read latency constraint on the high-density 3D SSDs. Specifically, our proposal relies on the hint information passed from applications to SSDs that specifies the expected read performance. By doing so, the lifetime consumption caused by the read-induced writes can be reduced, thereby prolonging the SSD lifetime. The detailed experimental evaluations show that our proposal can reduce up to 56% of the rewrite-induced spent-lifetime with only 2% lower performance, under a file-server application.
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U2 - 10.1145/3445814.3446733
DO - 10.1145/3445814.3446733
M3 - Conference contribution
AN - SCOPUS:85104744799
T3 - International Conference on Architectural Support for Programming Languages and Operating Systems - ASPLOS
SP - 730
EP - 742
BT - Proceedings of the 26th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, ASPLOS 2021
PB - Association for Computing Machinery
T2 - 26th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, ASPLOS 2021
Y2 - 19 April 2021 through 23 April 2021
ER -