Abstract
Single-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 angstrom thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≈525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Ti/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 angstrom thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.03. The PZ films with (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≈34 μC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 350 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 345-350 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 541 |
| State | Published - 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering