Properties and orientation of antiferroelectric lead zirconate thin films grown by MOCVD

Nan Chen, G. R. Bai, O. Auciello, R. E. Koritala, M. T. Lanagan

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations


Single-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 angstrom thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≈525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Ti/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 angstrom thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.03. The PZ films with (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≈34 μC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 350 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Original languageEnglish (US)
Pages (from-to)345-350
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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