Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Antiferroelectric
100%
Lead Zirconate
100%
PbZrO3
100%
Silica
33%
Angstrom
33%
Pseudo-cubic
33%
Template Layer
33%
TiSi
33%
Rutile
16%
PbTiO3
16%
Dielectric Constant
16%
Si Substrate
16%
Electric-field-induced
16%
Randomly Oriented
16%
Ferroelectric Phase
16%
Preferred Orientation
16%
Film Microstructure
16%
X-ray Diffraction (XRD) Analysis
16%
Ferroelectric State
16%
Induced Transformations
16%
Loss Tangent
16%
Antiferroelectric Phase
16%
Film Properties
16%
Material Science
Film
100%
Thin Films
100%
Metal-Organic Chemical Vapor Deposition
100%
Zirconates
100%
Ferroelectric Material
33%
Permittivity
16%
X Ray Diffraction Analysis
16%
Titanium Dioxide
16%