Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

Q. Li; A. Y. Polyakov; M. Skowronski; M. A. Fanton; R. C. Cavalero; R. G. Ray; B. E. Weiland

doi:10.1063/1.1923181

Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

Q. Li, A. Y. Polyakov, M. Skowronski, M. A. Fanton, R. C. Cavalero, R. G. Ray, B. E. Weiland

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H-SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron density decrease with increasing hydrogen content. The formation of electron traps (activation energies of 0.4 eV, 0.6 eV, 0.7 eV, 0.9 eV, and 1 eV) was also strongly suppressed. The above results are interpreted as a consequence of hydrocarbon formation produced by the reaction of hydrogen with the SiC source and the graphite parts of the furnace. This leads to more congruent evaporation of SiC and the shift of the gas phase and the SiC deposit stoichiometry due to less Si-rich conditions than in standard PVT growth.

Original language	English (US)
Article number	202102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1923181
State	Published - May 16 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1923181

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@article{45a560d0ef214d759d065e0ec3ebcd33,

title = "Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport",

abstract = "Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H-SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron density decrease with increasing hydrogen content. The formation of electron traps (activation energies of 0.4 eV, 0.6 eV, 0.7 eV, 0.9 eV, and 1 eV) was also strongly suppressed. The above results are interpreted as a consequence of hydrocarbon formation produced by the reaction of hydrogen with the SiC source and the graphite parts of the furnace. This leads to more congruent evaporation of SiC and the shift of the gas phase and the SiC deposit stoichiometry due to less Si-rich conditions than in standard PVT growth.",

author = "Q. Li and Polyakov, {A. Y.} and M. Skowronski and Fanton, {M. A.} and Cavalero, {R. C.} and Ray, {R. G.} and Weiland, {B. E.}",

note = "Funding Information: The work at Penn State EOC was supported in part by the Air Force Research Laboratory AFRL∕MLPS at Wright-Patterson AFB through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0063 and by the Office of Naval Research through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0173. ",

year = "2005",

month = may,

day = "16",

doi = "10.1063/1.1923181",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

AU - Li, Q.

AU - Polyakov, A. Y.

AU - Skowronski, M.

AU - Fanton, M. A.

AU - Cavalero, R. C.

AU - Ray, R. G.

AU - Weiland, B. E.

N1 - Funding Information: The work at Penn State EOC was supported in part by the Air Force Research Laboratory AFRL∕MLPS at Wright-Patterson AFB through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0063 and by the Office of Naval Research through NAVSEA Contract No. 00024-02-D-6604 Delivery Order No. 0173.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H-SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron density decrease with increasing hydrogen content. The formation of electron traps (activation energies of 0.4 eV, 0.6 eV, 0.7 eV, 0.9 eV, and 1 eV) was also strongly suppressed. The above results are interpreted as a consequence of hydrocarbon formation produced by the reaction of hydrogen with the SiC source and the graphite parts of the furnace. This leads to more congruent evaporation of SiC and the shift of the gas phase and the SiC deposit stoichiometry due to less Si-rich conditions than in standard PVT growth.

AB - Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H-SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron density decrease with increasing hydrogen content. The formation of electron traps (activation energies of 0.4 eV, 0.6 eV, 0.7 eV, 0.9 eV, and 1 eV) was also strongly suppressed. The above results are interpreted as a consequence of hydrocarbon formation produced by the reaction of hydrogen with the SiC source and the graphite parts of the furnace. This leads to more congruent evaporation of SiC and the shift of the gas phase and the SiC deposit stoichiometry due to less Si-rich conditions than in standard PVT growth.

UR - http://www.scopus.com/inward/record.url?scp=20844443825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844443825&partnerID=8YFLogxK

U2 - 10.1063/1.1923181

DO - 10.1063/1.1923181

M3 - Article

AN - SCOPUS:20844443825

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202102

ER -

Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

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