Abstract
The properties of lead zirconate titanate (PZT) thin films were characterized as a function of in-plane biaxial stress. Typical values of Pr and Ec for unstressed (i.e. no applied load) sol-gel films were measured using Pt/PZT/Pt/Ti/SiO2/Si test capacitors and are on the order of 28 μC/cm2 and 63 kV/cm, respectively. Residual stresses in PZT/electrode stacks were found to be a function of the annealing condition for the Pt/Ti bottom electrode. Measured values of Pt/Ti stress for sputtered films consisting of 150 nm Pt and 20 nm Ti varied with temperature from -386 MPa in the as-received state to 718 MPa after heating to 700 °C. Experimental stress states (of test capacitors) were modified from the fabricated condition in a biaxial stress rig designed to provide a uniform tensile or compressive load over the surface of a 3 inches substrate. The resulting applied stress state in the films ranged from -142 MPa to 212 MPa. Remnant polarization, coercive field strengths, capacitance, and tan δ were then measured in situ and correlated to the state of stress in the PZT film.
| Original language | English (US) |
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| Pages | 161-165 |
| Number of pages | 5 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
| Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
|---|---|
| City | East Brunswick, NJ, USA |
| Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering