Properties of Si / SiO2 interfaces in vertical trench MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the study of the Si/SiO2 interface of vertical U-shaped trench-gated n+ - polycrystalline Si / oxide / Si (UMOS) capacitor gate structure using capacitance-deep level transient spectroscopy (c-DLTS) and capacitance-voltage (CV). The oxide of a UMOS capacitor is three-dimensional- thermally-grown at different temperature 900°C - 1175°C, on sidewall and base of a reactive-ion etched silicon surface. High-density mid-gap Si/SiO 2 interfacial traps (∼1011 eV-1 cm -2) are observed with both holes and electron trapping. The amphoteric nature of traps is argued to arise from the Pb- dangling Si bond defect center. Moreover, a study of UMOSFET channel region using constant-amplitude charge pumping (CP), measurements coupled with electrical stressing of the gate oxide in the Fowler-Nordheim (FN) regime, have shown that the oxide edge adjacent to the drain and the oxide/silicon interface therein are the most susceptible regions to damage. SEM revealed non-uniformity in oxide thickness. Finally, enhanced UMOSFETS channel characteristics are observed for rounded-comer trench-bottom geometry in contrast with sharp-corner trench-bottom geometry.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
Pages225-228
Number of pages4
StatePublished - 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: May 15 2006May 16 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Other

OtherExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Country/TerritoryChina
CityShanghai
Period5/15/065/16/06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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