Abstract
Lead zirconate titanate thin films with a composition near the morphotropic phase boundary were prepared by the sol-gel method. Films were crystallized by a rapid thermal annealing (RTA) process. X-ray diffraction was used to monitor the crystallization of the processed films. The microstructure of the films was observed using field-emission scanning electron microscopy. The ferroelectric and dielectric properties of the PZT films fabricated under various annealing conditions were studied. The films showed good hysteresis loops with Pr = 30 μC/cm2 and Ec = 70 kV/cm. Piezoelectric properties were measured by both single beam and double beam interferometers.
| Original language | English (US) |
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| Pages | 511-514 |
| Number of pages | 4 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
| Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
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| City | East Brunswick, NJ, USA |
| Period | 8/18/96 → 8/21/96 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering