TY - JOUR
T1 - Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures
AU - Subramanian, Shruti
AU - Deng, Donna D.
AU - Xu, Ke
AU - Simonson, Nicholas
AU - Wang, Ke
AU - Zhang, Kehao
AU - Li, Jun
AU - Feenstra, Randall
AU - Fullerton-Shirey, Susan K.
AU - Robinson, Joshua A.
N1 - Funding Information:
This research has been funded by NSF CAREER (Award: 1453924 ), and partially funded by the Center for Low Energy Systems Technology (LEAST) , one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. The authors extend their thanks to Haiying Wang for making the TEM samples in the FIB microscope, and Maxwell Wetherington for his advice on Raman and PL spectroscopy. The authors acknowledge Michael Labella and Brian Bersch for their discussions regarding device fabrication. The authors also extend their gratitude to Ganesh Rahul Bhimanapati for his guidance with initial XPS measurements.
Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/12
Y1 - 2017/12
N2 - Graphene has been proposed as a high-quality contact to two-dimensional (2D) transition metal dichalcogenides (TMDs) for the development of “all 2D” devices. Here, we demonstrate the direct-growth of epitaxial graphene (EG) based lateral heterostructures where the EG acts as a directly grown contact to a molybdenum disulfide (MoS2) channel. Utilizing a “seed-free” process, the nucleation of MoS2 occurs at the lateral substrate/graphene interface, and subsequently grows outward from the edge of the graphene. Transmission electron microscopy (TEM) of the heterostructure provides the first direct observation that a pristine vertical overlap of MoS2 on graphene exists, instead of previously reported horizontal stitching, and demonstrates full preservation of the van der Waals gap in the overlap region. Electrolytic gating of the MoS2/EG heterostructures provides evidence that EG can significantly improve transport compared to the traditional metal/MoS2 junctions, reducing contact resistance by > 10x, while reducing the sheet resistance by ∼ 70%.
AB - Graphene has been proposed as a high-quality contact to two-dimensional (2D) transition metal dichalcogenides (TMDs) for the development of “all 2D” devices. Here, we demonstrate the direct-growth of epitaxial graphene (EG) based lateral heterostructures where the EG acts as a directly grown contact to a molybdenum disulfide (MoS2) channel. Utilizing a “seed-free” process, the nucleation of MoS2 occurs at the lateral substrate/graphene interface, and subsequently grows outward from the edge of the graphene. Transmission electron microscopy (TEM) of the heterostructure provides the first direct observation that a pristine vertical overlap of MoS2 on graphene exists, instead of previously reported horizontal stitching, and demonstrates full preservation of the van der Waals gap in the overlap region. Electrolytic gating of the MoS2/EG heterostructures provides evidence that EG can significantly improve transport compared to the traditional metal/MoS2 junctions, reducing contact resistance by > 10x, while reducing the sheet resistance by ∼ 70%.
UR - http://www.scopus.com/inward/record.url?scp=85030449351&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85030449351&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2017.09.058
DO - 10.1016/j.carbon.2017.09.058
M3 - Article
AN - SCOPUS:85030449351
SN - 0008-6223
VL - 125
SP - 551
EP - 556
JO - Carbon
JF - Carbon
ER -