Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Mingda Li; Cui Zu Chang; Brian J. Kirby; Michelle E. Jamer; Wenping Cui; Lijun Wu; Peng Wei; Yimei Zhu; Don Heiman; Ju Li; Jagadeesh S. Moodera

doi:10.1103/PhysRevLett.115.087201

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Mingda Li, Cui Zu Chang, Brian J. Kirby, Michelle E. Jamer, Wenping Cui, Lijun Wu, Peng Wei, Yimei Zhu, Don Heiman, Ju Li, Jagadeesh S. Moodera

Physics

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

Original language	English (US)
Article number	087201
Journal	Physical review letters
Volume	115
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.115.087201
State	Published - Aug 17 2015

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.115.087201

Cite this

@article{52928a95721040d285724c3ee2b5af8a,

title = "Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface",

abstract = "Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.",

author = "Mingda Li and Chang, {Cui Zu} and Kirby, {Brian J.} and Jamer, {Michelle E.} and Wenping Cui and Lijun Wu and Peng Wei and Yimei Zhu and Don Heiman and Ju Li and Moodera, {Jagadeesh S.}",

note = "Publisher Copyright: {\textcopyright} 2015 American Physical Society. {\textcopyright} 2015 American Physical Society.",

year = "2015",

month = aug,

day = "17",

doi = "10.1103/PhysRevLett.115.087201",

language = "English (US)",

volume = "115",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

AU - Li, Mingda

AU - Chang, Cui Zu

AU - Kirby, Brian J.

AU - Jamer, Michelle E.

AU - Cui, Wenping

AU - Wu, Lijun

AU - Wei, Peng

AU - Zhu, Yimei

AU - Heiman, Don

AU - Li, Ju

AU - Moodera, Jagadeesh S.

PY - 2015/8/17

Y1 - 2015/8/17

N2 - Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

AB - Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

UR - http://www.scopus.com/inward/record.url?scp=84940704391&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940704391&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.115.087201

DO - 10.1103/PhysRevLett.115.087201

M3 - Article

AN - SCOPUS:84940704391

SN - 0031-9007

VL - 115

JO - Physical review letters

JF - Physical review letters

IS - 8

M1 - 087201

ER -

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this