Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Mingda Li; Cui Zu Chang; Brian J. Kirby; Michelle E. Jamer; Wenping Cui; Lijun Wu; Peng Wei; Yimei Zhu; Don Heiman; Ju Li; Jagadeesh S. Moodera

doi:10.1103/PhysRevLett.115.087201

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Mingda Li
, Cui Zu Chang
, Brian J. Kirby
, Michelle E. Jamer
, Wenping Cui
, Lijun Wu
, Peng Wei
, Yimei Zhu
, Don Heiman
, Ju Li
, Jagadeesh S. Moodera

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

Original language	English (US)
Article number	087201
Journal	Physical review letters
Volume	115
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.115.087201
State	Published - Aug 17 2015

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.115.087201

Cite this

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title = "Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface",

abstract = "Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.",

author = "Mingda Li and Chang, \{Cui Zu\} and Kirby, \{Brian J.\} and Jamer, \{Michelle E.\} and Wenping Cui and Lijun Wu and Peng Wei and Yimei Zhu and Don Heiman and Ju Li and Moodera, \{Jagadeesh S.\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Physical Society. {\textcopyright} 2015 American Physical Society.",

year = "2015",

month = aug,

day = "17",

doi = "10.1103/PhysRevLett.115.087201",

language = "English (US)",

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T1 - Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

AU - Li, Mingda

AU - Chang, Cui Zu

AU - Kirby, Brian J.

AU - Jamer, Michelle E.

AU - Cui, Wenping

AU - Wu, Lijun

AU - Wei, Peng

AU - Zhu, Yimei

AU - Heiman, Don

AU - Li, Ju

AU - Moodera, Jagadeesh S.

PY - 2015/8/17

Y1 - 2015/8/17

N2 - Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

AB - Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2-xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

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DO - 10.1103/PhysRevLett.115.087201

M3 - Article

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IS - 8

M1 - 087201

ER -

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Abstract

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