TY - JOUR
T1 - Pt/ti/sio2/si substrates
AU - Fox, G. R.
AU - Trolier-McKinstry, S.
AU - Krupanidhi, S. B.
AU - Casas, L. M.
N1 - Funding Information:
The authors would like to thank Karen More for her part in the TEM work. This work was partially sponsored by the United States Department of Energy, Assistant Secretary for Conservation and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program, under Contract DE-AC05-84OR21400 managed by Martin Marietta Energy Systems, Inc. Travel expenses to Oak Ridge National Laboratory were provided by Oak Ridge Associated Universities.
PY - 1995/6
Y1 - 1995/6
N2 - Pt/Ti/SiO2/Si structures have been studied to investigate the structural, chemical, and microstructural changes that occur during annealing. Grain growth of the as-deposited Pt columns was observed after annealing at 650 °C, and extensive changes in the Pt microstructure were apparent following a 750 °C anneal for 20 min. In addition, two types of defects were identified on the surfaces of annealed substrates. Defect formation was retarded when the surface was covered with a ferroelectric film. Concurrent with the annealing-induced Pt microstructure changes, Ti from the adhesion layer between the Pt and the SiO2 migrated into the Pt layer and oxidized. It was shown with spectroscopic ellipsometry and Auger electron spectroscopy that for long annealing times, the titanium oxide layer can reach the Pt surface. Consequently, at the processing temperatures utilized in preparing many ferroelectric thin films, the substrate is not completely inert or immobile. The changes associated with Ti migration could be especially problematic in techniques that require the substrate to be heated prior to film deposition.
AB - Pt/Ti/SiO2/Si structures have been studied to investigate the structural, chemical, and microstructural changes that occur during annealing. Grain growth of the as-deposited Pt columns was observed after annealing at 650 °C, and extensive changes in the Pt microstructure were apparent following a 750 °C anneal for 20 min. In addition, two types of defects were identified on the surfaces of annealed substrates. Defect formation was retarded when the surface was covered with a ferroelectric film. Concurrent with the annealing-induced Pt microstructure changes, Ti from the adhesion layer between the Pt and the SiO2 migrated into the Pt layer and oxidized. It was shown with spectroscopic ellipsometry and Auger electron spectroscopy that for long annealing times, the titanium oxide layer can reach the Pt surface. Consequently, at the processing temperatures utilized in preparing many ferroelectric thin films, the substrate is not completely inert or immobile. The changes associated with Ti migration could be especially problematic in techniques that require the substrate to be heated prior to film deposition.
UR - https://www.scopus.com/pages/publications/0000993680
UR - https://www.scopus.com/pages/publications/0000993680#tab=citedBy
U2 - 10.1557/JMR.1995.1508
DO - 10.1557/JMR.1995.1508
M3 - Article
AN - SCOPUS:0000993680
SN - 0884-2914
VL - 10
SP - 1508
EP - 1515
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 6
ER -