Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)

Mayukh Das; Dipanjan Sen; Najam U. Sakib; Harikrishnan Ravichandran; Yongwen Sun; Zhiyu Zhang; Subir Ghosh; Pranavram Venkatram; Shiva Subbulakshmi Radhakrishnan; Alexander Sredenschek; Zhuohang Yu; Kalyan Jyoti Sarkar; Muhtasim Ul Karim Sadaf; Kalaiarasan Meganathan; Andrew Pannone; Ying Han; David Emanuel Sanchez; Divya Somvanshi; Zdenek Sofer; Mauricio Terrones; Yang Yang; Saptarshi Das

doi:10.1038/s41928-024-01309-7

Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)

Mayukh Das, Dipanjan Sen, Najam U. Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Emanuel Sanchez, Divya Somvanshi, Zdenek Sofer, Mauricio TerronesYang Yang, Saptarshi Das

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Correction to: Nature Electronicshttps://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “I_MAX” and should have read “I_ON”. These corrections have been made to the HTML and PDF versions of the article.

Original language	English (US)
Pages (from-to)	93
Number of pages	1
Journal	Nature Electronics
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41928-024-01309-7
State	Published - Jan 2025

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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Das, M., Sen, D., Sakib, N. U., Ravichandran, H., Sun, Y., Zhang, Z., Ghosh, S., Venkatram, P., Subbulakshmi Radhakrishnan, S., Sredenschek, A., Yu, Z., Sarkar, K. J., Sadaf, M. U. K., Meganathan, K., Pannone, A., Han, Y., Sanchez, D. E., Somvanshi, D., Sofer, Z., ... Das, S. (2025). Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2). Nature Electronics, 8(1), 93. https://doi.org/10.1038/s41928-024-01309-7

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title = "Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)",

abstract = "Correction to: Nature Electronicshttps://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “IMAX” and should have read “ION”. These corrections have been made to the HTML and PDF versions of the article.",

author = "Mayukh Das and Dipanjan Sen and Sakib, {Najam U.} and Harikrishnan Ravichandran and Yongwen Sun and Zhiyu Zhang and Subir Ghosh and Pranavram Venkatram and {Subbulakshmi Radhakrishnan}, Shiva and Alexander Sredenschek and Zhuohang Yu and Sarkar, {Kalyan Jyoti} and Sadaf, {Muhtasim Ul Karim} and Kalaiarasan Meganathan and Andrew Pannone and Ying Han and Sanchez, {David Emanuel} and Divya Somvanshi and Zdenek Sofer and Mauricio Terrones and Yang Yang and Saptarshi Das",

note = "Publisher Copyright: {\textcopyright} The Author(s), under exclusive licence to Springer Nature Limited 2024.",

year = "2025",

month = jan,

doi = "10.1038/s41928-024-01309-7",

language = "English (US)",

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Das, M, Sen, D, Sakib, NU, Ravichandran, H, Sun, Y, Zhang, Z, Ghosh, S, Venkatram, P, Subbulakshmi Radhakrishnan, S, Sredenschek, A, Yu, Z, Sarkar, KJ, Sadaf, MUK, Meganathan, K, Pannone, A, Han, Y, Sanchez, DE, Somvanshi, D, Sofer, Z, Terrones, M, Yang, Y & Das, S 2025, 'Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)', Nature Electronics, vol. 8, no. 1, pp. 93. https://doi.org/10.1038/s41928-024-01309-7

Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2). / Das, Mayukh; Sen, Dipanjan; Sakib, Najam U. et al.
In: Nature Electronics, Vol. 8, No. 1, 01.2025, p. 93.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Publisher Correction

T2 - High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)

AU - Das, Mayukh

AU - Sen, Dipanjan

AU - Sakib, Najam U.

AU - Ravichandran, Harikrishnan

AU - Sun, Yongwen

AU - Zhang, Zhiyu

AU - Ghosh, Subir

AU - Venkatram, Pranavram

AU - Subbulakshmi Radhakrishnan, Shiva

AU - Sredenschek, Alexander

AU - Yu, Zhuohang

AU - Sarkar, Kalyan Jyoti

AU - Sadaf, Muhtasim Ul Karim

AU - Meganathan, Kalaiarasan

AU - Pannone, Andrew

AU - Han, Ying

AU - Sanchez, David Emanuel

AU - Somvanshi, Divya

AU - Sofer, Zdenek

AU - Terrones, Mauricio

AU - Yang, Yang

AU - Das, Saptarshi

PY - 2025/1

Y1 - 2025/1

N2 - Correction to: Nature Electronicshttps://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “IMAX” and should have read “ION”. These corrections have been made to the HTML and PDF versions of the article.

AB - Correction to: Nature Electronicshttps://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “IMAX” and should have read “ION”. These corrections have been made to the HTML and PDF versions of the article.

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U2 - 10.1038/s41928-024-01309-7

DO - 10.1038/s41928-024-01309-7

M3 - Comment/debate

AN - SCOPUS:85209206812

SN - 2520-1131

VL - 8

SP - 93

JO - Nature Electronics

JF - Nature Electronics

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Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials (Nature Electronics, (2024), 8, 1, (24-35), 10.1038/s41928-024-01265-2)

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