Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

Y. Espinal; M. T. Kesim; I. B. Misirlioglu; S. Trolier-McKinstry; J. V. Mantese; S. P. Alpay

doi:10.1063/1.4903993

Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

Y. Espinal, M. T. Kesim, I. B. Misirlioglu, S. Trolier-McKinstry, J. V. Mantese, S. P. Alpay

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Abstract

The dielectric and pyroelectric properties of c -domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr_0.2Ti_0.8O₃ with Al₂O₃, SiO₂, Si₃ N₄, HfO₂, and TiO₂ buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr_0.2Ti_0.8O₃ films with 1% Al₂O₃ interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm^-2 °C^-1, respectively. Both values are higher than the intrinsic response of PbZr_0.2Ti_0.8O₃ monolayer on Si.

Original language	English (US)
Article number	232905
Journal	Applied Physics Letters
Volume	105
Issue number	23
DOIs	https://doi.org/10.1063/1.4903993
State	Published - Dec 8 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4903993

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title = "Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers",

abstract = "The dielectric and pyroelectric properties of c -domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3 N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.",

author = "Y. Espinal and Kesim, {M. T.} and Misirlioglu, {I. B.} and S. Trolier-McKinstry and Mantese, {J. V.} and Alpay, {S. P.}",

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doi = "10.1063/1.4903993",

language = "English (US)",

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T1 - Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

AU - Espinal, Y.

AU - Kesim, M. T.

AU - Misirlioglu, I. B.

AU - Trolier-McKinstry, S.

AU - Mantese, J. V.

AU - Alpay, S. P.

PY - 2014/12/8

Y1 - 2014/12/8

N2 - The dielectric and pyroelectric properties of c -domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3 N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

AB - The dielectric and pyroelectric properties of c -domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3 N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

Abstract

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