Abstract
PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.
Original language | English (US) |
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Pages | 69-72 |
Number of pages | 4 |
DOIs | |
State | Published - 2013 |
Event | 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 - Prague 4, Czech Republic Duration: Jul 21 2013 → Jul 25 2013 |
Other
Other | 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 |
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Country/Territory | Czech Republic |
City | Prague 4 |
Period | 7/21/13 → 7/25/13 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering