Quantification of trap densities at dielectric/III-V semiconductor interfaces

Roman Engel-Herbert, Yoontae Hwang, Susanne Stemmer

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High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

Original languageEnglish (US)
Article number062905
JournalApplied Physics Letters
Issue number6
StatePublished - Aug 9 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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