Quantification of trap densities at dielectric/III-V semiconductor interfaces

Roman Engel-Herbert; Yoontae Hwang; Susanne Stemmer

doi:10.1063/1.3479047

Quantification of trap densities at dielectric/III-V semiconductor interfaces

Roman Engel-Herbert, Yoontae Hwang, Susanne Stemmer

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (D_it) and band bending of HfO₂/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

Original language	English (US)
Article number	062905
Journal	Applied Physics Letters
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.3479047
State	Published - Aug 9 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3479047

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title = "Quantification of trap densities at dielectric/III-V semiconductor interfaces",

abstract = "High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.",

author = "Roman Engel-Herbert and Yoontae Hwang and Susanne Stemmer",

note = "Funding Information: The authors thank funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). R.E.H. thanks O. Bierwagen for valuable discussions.",

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T1 - Quantification of trap densities at dielectric/III-V semiconductor interfaces

AU - Engel-Herbert, Roman

AU - Hwang, Yoontae

AU - Stemmer, Susanne

N1 - Funding Information: The authors thank funding from the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). R.E.H. thanks O. Bierwagen for valuable discussions.

PY - 2010/8/9

Y1 - 2010/8/9

N2 - High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

AB - High-frequency capacitance-voltage curves for capacitors with high- k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53 Ga0.47 As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

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Quantification of trap densities at dielectric/III-V semiconductor interfaces

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