Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure

D. M. Schaadt; E. J. Miller; E. T. Yu; J. M. Redwing

doi:10.1116/1.1385914

Quantitative analysis of nanoscale electronic properties in an Al_xGa_1-xN/GaN heterostructure field-effect transistor structure

D. M. Schaadt, E. J. Miller, E. T. Yu, J. M. Redwing

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.

Original language	English (US)
Pages (from-to)	1671-1674
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1385914
State	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1385914

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@article{5130fe1c90064bc287c2bd50e472503b,

title = "Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure",

abstract = "Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.",

author = "Schaadt, {D. M.} and Miller, {E. J.} and Yu, {E. T.} and Redwing, {J. M.}",

year = "2001",

month = jul,

doi = "10.1116/1.1385914",

language = "English (US)",

volume = "19",

pages = "1671--1674",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

}

Quantitative analysis of nanoscale electronic properties in an Al_xGa_1-xN/GaN heterostructure field-effect transistor structure. / Schaadt, D. M.; Miller, E. J.; Yu, E. T. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 4, 07.2001, p. 1671-1674.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure

AU - Schaadt, D. M.

AU - Miller, E. J.

AU - Yu, E. T.

AU - Redwing, J. M.

PY - 2001/7

Y1 - 2001/7

N2 - Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.

AB - Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.

UR - http://www.scopus.com/inward/record.url?scp=0035535375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035535375&partnerID=8YFLogxK

U2 - 10.1116/1.1385914

DO - 10.1116/1.1385914

M3 - Conference article

AN - SCOPUS:0035535375

SN - 1071-1023

VL - 19

SP - 1671

EP - 1674

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Quantitative analysis of nanoscale electronic properties in an Al_xGa_1-xN/GaN heterostructure field-effect transistor structure

Abstract

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