Abstract
Local dC/dV spectroscopy performed in a SCM was used to quantify and map the threshold voltage distribution in an AlGa-N/GaN HFET structure. Small round features were attributed to the effect of the electrostatic potential of charged threading dislocations that cause localized reduction or depletion of carriers from the 2DEG. An analytical model and simulations of electrostatic potential and electron concentration were compared and used to explain the observed features.
Original language | English (US) |
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Pages (from-to) | 1671-1674 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering