TY - JOUR
T1 - Quantitative and high spatial resolution d33 measurement of piezoelectric bulk and thin films
AU - Shetty, Smitha
AU - Yang, Jung In
AU - Stitt, Joe
AU - Trolier-Mckinstry, Susan
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/11/7
Y1 - 2015/11/7
N2 - A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d33 measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d33, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d33 measurements on single crystal 0.67PbMg0.33Nb0.67O3-0.33PbTiO3 and bulk PbZrTiO3-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr0.52Ti0.48O3 films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room temperature and 150 °C poled 5 μm and 10 μm features etched in 0.5 μm thick PbZr0.52Ti0.48O3 films doped with 1% Nb confirmed minimal substrate contributions to the effective d33, f. Furthermore, enhanced d33, f values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometry on finely patterned electrodes.
AB - A single beam laser interferometer based on a modified Mirau detection scheme with a vertical resolution of ∼5 pm was developed for localized d33 measurements on patterned piezoelectric films. The tool provides high spatial resolution (∼2 μm), essential for understanding scaling and processing effects in piezoelectric materials. This approach enables quantitative information on d33, currently difficult in local measurement techniques such as piezoresponse force microscopy. The interferometer is built in a custom microscope and employs a phase lock-in technique in order to detect sub-Angstrom displacements. d33 measurements on single crystal 0.67PbMg0.33Nb0.67O3-0.33PbTiO3 and bulk PbZrTiO3-5A ceramics demonstrated agreement within <3% with measurements using a double beam laser interferometer. Substrate bending contributions to out-of-plane strain, observed in thin continuous PbZr0.52Ti0.48O3 films grown on Si substrates is reduced for electrode diameters smaller than 100 μm. Direct scanning across room temperature and 150 °C poled 5 μm and 10 μm features etched in 0.5 μm thick PbZr0.52Ti0.48O3 films doped with 1% Nb confirmed minimal substrate contributions to the effective d33, f. Furthermore, enhanced d33, f values were observed along the feature edges due to partial declamping from the substrate, thus validating the application of single beam interferometry on finely patterned electrodes.
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U2 - 10.1063/1.4935140
DO - 10.1063/1.4935140
M3 - Article
AN - SCOPUS:84946763826
SN - 0021-8979
VL - 118
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 17
M1 - 174104
ER -