TY - GEN
T1 - Quantitative electrically detected magnetic resonance for device reliability studies
AU - Cochrane, Corey J.
AU - Anders, Mark
AU - Mutch, Mike
AU - Lenahan, Patrick
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014
Y1 - 2014
N2 - Electrically detected magnetic resonance (EDMR) is a valuable tool for studying a variety of reliability problems, including the negative-bias temperature instability, total ionizing dose radiation damage, and instability in high-K gate stack-based MOS devices. Although conventional high-field EDMR can provide identification of the physical and chemical nature of electrically active reliability dominating defects in microelectronic devices, all of the EDMR studies to date have been limited by one significant shortcoming: EDMR is not quantitative. Although a large EDMR response generally corresponds to a high defect density and a small EDMR response corresponds to a low one, it has not been possible to assign actual numbers to the defect densities detected via EDMR. We've solved this problem.
AB - Electrically detected magnetic resonance (EDMR) is a valuable tool for studying a variety of reliability problems, including the negative-bias temperature instability, total ionizing dose radiation damage, and instability in high-K gate stack-based MOS devices. Although conventional high-field EDMR can provide identification of the physical and chemical nature of electrically active reliability dominating defects in microelectronic devices, all of the EDMR studies to date have been limited by one significant shortcoming: EDMR is not quantitative. Although a large EDMR response generally corresponds to a high defect density and a small EDMR response corresponds to a low one, it has not been possible to assign actual numbers to the defect densities detected via EDMR. We've solved this problem.
UR - http://www.scopus.com/inward/record.url?scp=84988267093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84988267093&partnerID=8YFLogxK
U2 - 10.1109/IIRW.2014.7049495
DO - 10.1109/IIRW.2014.7049495
M3 - Conference contribution
AN - SCOPUS:84988267093
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 6
EP - 9
BT - 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
Y2 - 12 October 2014 through 16 October 2014
ER -