Quantitative model of radiation induced charge trapping in SiO2

J. F. Conley; P. M. Lenahan; B. D. Wallace; P. Cole

doi:10.1109/23.658946

Quantitative model of radiation induced charge trapping in SiO₂

J. F. Conley, P. M. Lenahan, B. D. Wallace, P. Cole

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A predictive model of radiation induced oxide charging, based on statistical thermodynamics and electron spin resonance measurements of defects known as E′ centers, has been developed. The model is successfully tested on ⁶⁰Co irradiated MOSFETs.

Original language	English (US)
Pages (from-to)	1804-1809
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	44
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.658946
State	Published - 1997

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Quantitative model of radiation induced charge trapping in SiO2",

abstract = "A predictive model of radiation induced oxide charging, based on statistical thermodynamics and electron spin resonance measurements of defects known as E′ centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs.",

author = "Conley, {J. F.} and Lenahan, {P. M.} and Wallace, {B. D.} and P. Cole",

year = "1997",

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volume = "44",

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AU - Lenahan, P. M.

AU - Wallace, B. D.

AU - Cole, P.

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Y1 - 1997

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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Quantitative model of radiation induced charge trapping in SiO₂

Abstract

All Science Journal Classification (ASJC) codes

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