Quantitative model of radiation induced charge trapping in SiO2

J. F. Conley, P. M. Lenahan, B. D. Wallace, P. Cole

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


A predictive model of radiation induced oxide charging, based on statistical thermodynamics and electron spin resonance measurements of defects known as E′ centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs.

Original languageEnglish (US)
Pages (from-to)1804-1809
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number6 PART 1
StatePublished - 1997

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Quantitative model of radiation induced charge trapping in SiO2'. Together they form a unique fingerprint.

Cite this