Quantum Hall effect from the topological surface states of strained bulk HgTe

C. Brüne; C. X. Liu; E. G. Novik; E. M. Hankiewicz; H. Buhmann; Y. L. Chen; X. L. Qi; Z. X. Shen; S. C. Zhang; L. W. Molenkamp

doi:10.1103/PhysRevLett.106.126803

Quantum Hall effect from the topological surface states of strained bulk HgTe

C. Brüne, C. X. Liu, E. G. Novik, E. M. Hankiewicz, H. Buhmann, Y. L. Chen, X. L. Qi, Z. X. Shen, S. C. Zhang, L. W. Molenkamp

Physics

Research output: Contribution to journal › Article › peer-review

439 Scopus citations

Abstract

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

Original language	English (US)
Article number	126803
Journal	Physical review letters
Volume	106
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.106.126803
State	Published - Mar 22 2011

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1103/PhysRevLett.106.126803

Cite this

@article{c96495aae5c84d4d91442b77bb0e16ac,

title = "Quantum Hall effect from the topological surface states of strained bulk HgTe",

abstract = "We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.",

author = "C. Br{\"u}ne and Liu, {C. X.} and Novik, {E. G.} and Hankiewicz, {E. M.} and H. Buhmann and Chen, {Y. L.} and Qi, {X. L.} and Shen, {Z. X.} and Zhang, {S. C.} and Molenkamp, {L. W.}",

year = "2011",

month = mar,

day = "22",

doi = "10.1103/PhysRevLett.106.126803",

language = "English (US)",

volume = "106",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "12",

}

TY - JOUR

T1 - Quantum Hall effect from the topological surface states of strained bulk HgTe

AU - Brüne, C.

AU - Liu, C. X.

AU - Novik, E. G.

AU - Hankiewicz, E. M.

AU - Buhmann, H.

AU - Chen, Y. L.

AU - Qi, X. L.

AU - Shen, Z. X.

AU - Zhang, S. C.

AU - Molenkamp, L. W.

PY - 2011/3/22

Y1 - 2011/3/22

N2 - We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

AB - We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

UR - http://www.scopus.com/inward/record.url?scp=79952951345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952951345&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.106.126803

DO - 10.1103/PhysRevLett.106.126803

M3 - Article

AN - SCOPUS:79952951345

SN - 0031-9007

VL - 106

JO - Physical review letters

JF - Physical review letters

IS - 12

M1 - 126803

ER -

Quantum Hall effect from the topological surface states of strained bulk HgTe

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this