Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

Yi Xiao, Shan Deng, Zijian Zhao, Zubair Faris, Yixin Xu, Tzu Jung Huang, Vijaykrishnan Narayanan, Kai Ni

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In this work, we exploit a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi-nondestructive readout (QNRO) of ferroelectric polarization ( PFE ) in a capacitor, which can relax the endurance requirement of the ferroelectric thin film and exploits the benefits of both FeRAM and ferroelectric FET (FeFET). We demonstrate that: i) QNRO sensing of PFE is conducted successfully in experiment with a ON/OFF ratio ( ION / IOFF ) > 103, ION > 10~μ A , and read endurance > 106 cycles, which can relax the FeRAM endurance requirement by 10 ^\mathrm 6x ; ii) optimization of the cell performance can be realized by tuning the metal-ferroelectric-metal capacitor (MFM) capacitor to read transistor area ratio and read transistor threshold voltage ( VTH ); iii) the 2TnC cell structure is 3D-compatible, enabling integration of highly dense memory solution; iv) the 2TnC cell structure also enables compute-in-memory (CIM) applications of FeRAM, which has not been widely explored. With this technology, storage and memory-centric computing can be enabled.

Original languageEnglish (US)
Pages (from-to)1436-1439
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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