Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

Material Science

• Film 100%
• Epitaxy 100%
• Gallium Arsenide 100%
• Thick Films 100%
• Density 33%
• Photovoltaics 33%
• Thin Films 33%
• Molecular Beam Epitaxy 33%
• Heterojunction 33%
• Field Effect Transistor 33%
• Optical Property 33%
• Electronic Property 33%
• Semiconductor Material 33%
• Post-Transition Metal 33%
• Transition Metal Chalcogenides 33%
• Ultrathin Film 33%

Keyphrases

• Nanoscale Thin Films 100%
• GaSe 100%
• GaAs(111) 100%
• Polymorph 20%
• Ga Vacancy 20%
• Two Dimensional 10%
• Molecular Beam Epitaxy 10%
• Growth Conditions 10%
• Three-dimensional (3D) 10%
• Enthalpy of Formation 10%
• Electronic Properties 10%
• Field-effect Transistors 10%
• Density Functional Theory 10%
• GaAs Substrate 10%
• Indirect Band Gap 10%
• Direct Band Gap 10%
• Optical Properties 10%
• P-type 10%
• Valuable Insight 10%
• Formation Mechanism 10%
• Scale-up Production 10%
• Single-crystalline Films 10%
• Photodetector 10%
• 2D Semiconductors 10%
• Atomic Scale 10%
• Ultrathin Films 10%
• Vacancy Concentration 10%
• Direct Growth 10%
• Bulk Material 10%
• Filmmaking 10%
• Wafer-scale 10%
• Single-layer Film 10%
• Nanometre 10%
• Heterostructure Device 10%
• Van Der Waals Materials 10%