Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure

Xin Wang; Haoting Shen; Sarah M. Eichfield; Theresa S. Mayer; Joan M. Redwing

doi:10.1109/JPHOTOV.2016.2601949

Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure

Xin Wang, Haoting Shen, Sarah M. Eichfield, Theresa S. Mayer, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10^-7 A/cm². Under one-sun illumination, the device shows a short-circuit current (I_sc) of 2.66 × 10^-7 mA, open-circuit voltage (V_oc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger I_sc of 2.75 × 10^-7 mA, but the overall efficiency decreased due to a larger leakage current and lower V_oc.

Original language	English (US)
Pages (from-to)	1446-1450
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2601949
State	Published - Nov 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2016.2601949

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@article{85465221e5134a4a9bcbb9186363fbd1,

title = "Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure",

abstract = "Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.",

author = "Xin Wang and Haoting Shen and Eichfield, {Sarah M.} and Mayer, {Theresa S.} and Redwing, {Joan M.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-FG36-08GO18010 and the National Science Foundation under Grant PFI: AIR-TT 1414236. The device processing was accomplished in the laboratories of The Pennsylvania State University Materials Research Institute Nanofabrication Network, which was supported by the National Science Foundation under Cooperative Agreement No. 0335765. Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/JPHOTOV.2016.2601949",

language = "English (US)",

volume = "6",

pages = "1446--1450",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

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AU - Wang, Xin

AU - Shen, Haoting

AU - Eichfield, Sarah M.

AU - Mayer, Theresa S.

AU - Redwing, Joan M.

N1 - Funding Information: This work was supported by the U.S. Department of Energy under Contract No. DE-FG36-08GO18010 and the National Science Foundation under Grant PFI: AIR-TT 1414236. The device processing was accomplished in the laboratories of The Pennsylvania State University Materials Research Institute Nanofabrication Network, which was supported by the National Science Foundation under Cooperative Agreement No. 0335765. Publisher Copyright: © 2011-2012 IEEE.

PY - 2016/11

Y1 - 2016/11

N2 - Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.

AB - Single-wire radial p-i-n heterojunction with intrinsic thin layer nanowire solar cell devices were fabricated by plasma-enhanced chemical vapor deposition of thin intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) shell layers on p-type silicon nanowires synthesized by vapor-liquid-solid growth. The thin intrinsic a-Si:H layer provided an effective passivation of the crystalline Si nanowire surface, and the corresponding device exhibits a dark current density of 1.6 × 10-7 A/cm2. Under one-sun illumination, the device shows a short-circuit current (Isc) of 2.66 × 10-7 mA, open-circuit voltage (Voc) of 0.46 V, fill factor (ff) of 0.52, and energy conversion efficiency (η) of 6.3%. Indium tin oxide (ITO) contacts were also deposited on the n-type shell as an antireflection layer to improve light absorption in the nanowire device. After ITO deposition, the device exhibited a larger Isc of 2.75 × 10-7 mA, but the overall efficiency decreased due to a larger leakage current and lower Voc.

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Radial Junction Silicon Nanowire Photovoltaics with Heterojunction with Intrinsic Thin Layer (HIT) Structure

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