Radiation effects in GAAS MIS schottky diodes

Keyphrases

• Absorbed Dose 33%
• Attenuation 33%
• Carrier Compensation 33%
• Carrier Lifetime 33%
• Current Flow 33%
• Depletion Region 33%
• Diode 33%
• Diode Ideality Factor 33%
• Electrical Behavior 33%
• Electrical Characteristics 33%
• Field Dependence 33%
• Field Emission 33%
• Forward Voltage 33%
• Gallium Arsenide 66%
• I-V Characteristics 33%
• Irradiation 66%
• Irradiation Level 33%
• Low Voltage 33%
• MIS Schottky Barrier Diode 33%
• MIS Schottky Diode 100%
• Native Oxide Layer 33%
• Neutron 33%
• Neutron Fluence 33%
• Neutron Irradiation 33%
• Order of Magnitude 33%
• Oxide Layer 33%
• Possible Mechanisms 33%
• Practical Devices 33%
• Radiation Effects 100%
• Radiation Level 33%
• Recombination Current 33%
• Reverse Current 100%
• Strong Field 33%
• Temperature Effect 33%

Engineering

• Carrier Lifetime 50%
• Current Flow 50%
• Current-Voltage Characteristic 50%
• Depletion Region 50%
• Fast Neutron 50%
• Field Emission 50%
• Forward Voltage 50%
• Gallium Arsenide 100%
• Ideality Factor 50%
• Oxide Layer 100%
• Radiation Effect 100%
• Schottky Barrier Diode 50%
• Significant Change 50%
• Temperature Dependence 50%

Material Science

• Carrier Lifetime 50%
• Cobalt 50%
• Current-Voltage Characteristic 50%
• Electrical Property 50%
• Gallium Arsenide 100%
• Neutron Irradiation 100%
• Oxide Compound 100%
• Schottky Barrier 50%
• Schottky Diode 100%