Radiation Effects in Oxynitrides Grown in N2O

N. S. Saks; M. Simons; D. M. Fleetwood; J. T. Yount; P. M. Lenahan; R. B. Klein

doi:10.1109/23.340517

Radiation Effects in Oxynitrides Grown in N2O

N. S. Saks, M. Simons, D. M. Fleetwood, J. T. Yount, P. M. Lenahan, R. B. Klein

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.

Original language	English (US)
Pages (from-to)	1854-1863
Number of pages	10
Journal	IEEE Transactions on Nuclear Science
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/23.340517
State	Published - Dec 1994

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/23.340517

Cite this

@article{9c8eea4c568d4764aa9fc0e5d88f1525,

title = "Radiation Effects in Oxynitrides Grown in N2O",

abstract = "Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.",

author = "Saks, {N. S.} and M. Simons and Fleetwood, {D. M.} and Yount, {J. T.} and Lenahan, {P. M.} and Klein, {R. B.}",

note = "Funding Information: This work was supported by Defense Nuclear Agency (RAES), the Office of Naval Research, and the Department of Energy. We also thank the NRL Nanoelectronics Processing Facility for sample fabrication, and R.A. Reber Jr. for assistance with TSC measurements.",

year = "1994",

month = dec,

doi = "10.1109/23.340517",

language = "English (US)",

volume = "41",

pages = "1854--1863",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Radiation Effects in Oxynitrides Grown in N2O

AU - Saks, N. S.

AU - Simons, M.

AU - Fleetwood, D. M.

AU - Yount, J. T.

AU - Lenahan, P. M.

AU - Klein, R. B.

N1 - Funding Information: This work was supported by Defense Nuclear Agency (RAES), the Office of Naval Research, and the Department of Energy. We also thank the NRL Nanoelectronics Processing Facility for sample fabrication, and R.A. Reber Jr. for assistance with TSC measurements.

PY - 1994/12

Y1 - 1994/12

N2 - Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.

AB - Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.

UR - http://www.scopus.com/inward/record.url?scp=0028698045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028698045&partnerID=8YFLogxK

U2 - 10.1109/23.340517

DO - 10.1109/23.340517

M3 - Article

AN - SCOPUS:0028698045

SN - 0018-9499

VL - 41

SP - 1854

EP - 1863

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

Radiation Effects in Oxynitrides Grown in N2O

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this