Radiation Effects in Oxynitrides Grown in N2O

N. S. Saks, M. Simons, D. M. Fleetwood, J. T. Yount, P. M. Lenahan, R. B. Klein

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Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.

Original languageEnglish (US)
Pages (from-to)1854-1863
Number of pages10
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1994

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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