Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: Oxidation in N2O only, and two-step oxidation with initial oxidation in O2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electron spin resonance, and hole detrapping using thermally-stimulated current analysis. N2O oxydo not appear to have the well-known drawbacks of NH3-annealed oxynitrides. Creation of interface traps during irradiation is reduced in the N2O oxynitrides, with the degree of improvement depending on the fabrication process.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering