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Radiation-induced defect states in low to moderately boron-doped silicon
O. O. Awadelkarim
, B. Monemar
Engineering Science and Mechanics
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peer-review
4
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Keyphrases
Annealing
100%
Cm(III)
100%
Hole Trapping
100%
Defect States
100%
Valence Band
100%
Boron-doped Silicon
100%
Radiation Defects
100%
Thermal Stability
50%
Electron Beam
50%
Irradiation
50%
Room Temperature
50%
Deep Level Transient Spectroscopy
50%
Thermal Energy
50%
Divacancy
50%
Conduction Band
50%
Boron Doping
50%
Electron Traps
50%
Published Data
50%
Boron Content
50%
Energy Position
50%
MeV Electrons
50%
Defect Identification
50%
Chemistry
Silicon
100%
Valence Band
100%
Hole Trap
100%
Ambient Reaction Temperature
50%
Electron Beam
50%
Thermal Stability
50%
Conduction Band
50%
Deep Level Transient Spectroscopy
50%
Electron Trap
50%
Engineering
Valence Band
100%
Induced Defect
100%
Energy Engineering
50%
Room Temperature
50%
Transients
50%
Defects
50%
Deep Level
50%
Electron Trap
50%
Conduction Band
50%
Physics
Electron Beam
100%
Transients
100%
Room Temperature
100%
Conduction Band
100%
Material Science
Boron
100%
Silicon
100%
Thermal Stability
25%
Deep-Level Transient Spectroscopy
25%