Abstract
We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.
Original language | English (US) |
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Pages (from-to) | 215-218 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 22 |
Issue number | 1-4 |
DOIs | |
State | Published - Aug 1993 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering