Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si

J. F. Conley; P. M. Lenahan

doi:10.1016/0167-9317(93)90160-7

Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO₂ Films on Si

J. F. Conley
, P. M. Lenahan

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.

Original language	English (US)
Pages (from-to)	215-218
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90160-7
State	Published - Aug 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(93)90160-7

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title = "Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si",

abstract = "We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.",

author = "Conley, \{J. F.\} and Lenahan, \{P. M.\}",

year = "1993",

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doi = "10.1016/0167-9317(93)90160-7",

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T1 - Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si

AU - Conley, J. F.

AU - Lenahan, P. M.

PY - 1993/8

Y1 - 1993/8

N2 - We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.

AB - We establish strong experimental evidence linking reactions between molecular hydrogen and E' center hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices.

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UR - https://www.scopus.com/pages/publications/0027641182#tab=citedBy

U2 - 10.1016/0167-9317(93)90160-7

DO - 10.1016/0167-9317(93)90160-7

M3 - Article

AN - SCOPUS:0027641182

SN - 0167-9317

VL - 22

SP - 215

EP - 218

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO₂ Films on Si

Abstract

All Science Journal Classification (ASJC) codes

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