Radiation-induced interface traps in MOS devices: Capture cross section and density of states of Pb1 silicon dangling bond centers

P. M. Lenahan; N. A. Bohna; J. P. Campbell

doi:10.1109/TNS.2002.805357

Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P_b1 silicon dangling bond centers

P. M. Lenahan, N. A. Bohna, J. P. Campbell

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

P_b centers dominate radiation-induced interface defects. On the (100) Si/SiO₂ interface, the P_b0 center dominates radiation damage, but another center, the P_b1, plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of P_b1. The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.

Original language	English (US)
Pages (from-to)	2708-2712
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	49 I
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2002.805357
State	Published - Dec 2002

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2002.805357

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abstract = "Pb centers dominate radiation-induced interface defects. On the (100) Si/SiO2 interface, the Pb0 center dominates radiation damage, but another center, the Pb1, plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of Pb1. The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.",

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Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P_b1 silicon dangling bond centers

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