Abstract
We link atomic-scale defects called E′ centers to ra- diation-induced leakage current (RILC). We present evidence that strongly suggests that RILC tolerance is processing dependent and that this tolerance appears to be correlated with lower E′ center generation. We furthermore note that in oxides subjected to quite high irradiation levels, the density of (generally electrically neutral) E′ centers is far greater than would be expected for the hole trap E′ centers involved in the radiation-induced positive charge buildup observed in thicker oxides.
Original language | English (US) |
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Pages (from-to) | 2101-2106 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 48 |
Issue number | 6 I |
DOIs | |
State | Published - Dec 2001 |
Event | 2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada Duration: Jul 16 2001 → Jul 20 2001 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering