TY - JOUR
T1 - Radiation-induced oxide charge in low-and high-h 2 environments
AU - Rowsey, Nicole L.
AU - Law, Mark E.
AU - Schrimpf, Ronald D.
AU - Fleetwood, Daniel M.
AU - Tuttle, Blair R.
AU - Pantelides, Sokrates T.
N1 - Funding Information:
Manuscript received September 26, 2011; revised December 02, 2011; accepted January 03, 2012. Date of publication February 16, 2012; date of current version August 14, 2012. This work was supported in part by the Air Force Office of Scientific Research.
PY - 2012
Y1 - 2012
N2 - Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H 2 concentrations by implementing first-principles calculations of the energetics, and dynamics of charge transport and trapping, into TCAD simulations of irradiated MOS structures. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities. The rate of the interface trap reaction, in which protons that are liberated from charged oxygen vacancies by molecular hydrogen form dangling bonds on the interface, is found to play a key role in determining the relative concentrations of oxide and interface-trap charge densities.
AB - Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H 2 concentrations by implementing first-principles calculations of the energetics, and dynamics of charge transport and trapping, into TCAD simulations of irradiated MOS structures. Hole trapping dominates for typical H 2 densities, but protons can dominate at high H 2 densities. The rate of the interface trap reaction, in which protons that are liberated from charged oxygen vacancies by molecular hydrogen form dangling bonds on the interface, is found to play a key role in determining the relative concentrations of oxide and interface-trap charge densities.
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U2 - 10.1109/TNS.2012.2183889
DO - 10.1109/TNS.2012.2183889
M3 - Article
AN - SCOPUS:84865390614
SN - 0018-9499
VL - 59
SP - 755
EP - 759
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 4 PART 1
M1 - 6153410
ER -