Radiation-induced paramagnetic defects in Mos structures

P. M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


We have subjected thermally grown films of SiO on Si substrates to Co gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals.

Original languageEnglish (US)
Pages (from-to)1459-1461
Number of pages3
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1982

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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