Radiation-induced paramagnetic defects in Mos structures

P. M. Lenahan; P. V. Dressendorfer

doi:10.1109/TNS.1982.4336386

Radiation-induced paramagnetic defects in Mos structures

P. M. Lenahan, P. V. Dressendorfer

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Abstract

We have subjected thermally grown films of SiO on Si substrates to Co gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals.

Original language	English (US)
Pages (from-to)	1459-1461
Number of pages	3
Journal	IEEE Transactions on Nuclear Science
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1982.4336386
State	Published - Dec 1982

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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abstract = "We have subjected thermally grown films of SiO on Si substrates to Co gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals.",

author = "Lenahan, {P. M.} and Dressendorfer, {P. V.}",

year = "1982",

month = dec,

doi = "10.1109/TNS.1982.4336386",

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AU - Lenahan, P. M.

AU - Dressendorfer, P. V.

PY - 1982/12

Y1 - 1982/12

N2 - We have subjected thermally grown films of SiO on Si substrates to Co gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals.

AB - We have subjected thermally grown films of SiO on Si substrates to Co gamma irradiation. Using electron spin resonance we observe three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals.

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JF - IEEE Transactions on Nuclear Science

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Radiation-induced paramagnetic defects in Mos structures

Abstract

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