Radiation-induced trivalent silicon defect buildup at the si-sio2 interface in MOS structures

P. M. Lenahan; K. L. Brower; P. V. Dressendorfer; W. C. Johnson

doi:10.1109/TNS.1981.4335683

Radiation-induced trivalent silicon defect buildup at the si-sio2 interface in MOS structures

P. M. Lenahan, K. L. Brower, P. V. Dressendorfer, W. C. Johnson

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.

Original language	English (US)
Pages (from-to)	4105-4106
Number of pages	2
Journal	IEEE Transactions on Nuclear Science
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1981.4335683
State	Published - Dec 1981

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.1981.4335683

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title = "Radiation-induced trivalent silicon defect buildup at the si-sio2 interface in MOS structures",

abstract = "Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.",

author = "Lenahan, {P. M.} and Brower, {K. L.} and Dressendorfer, {P. V.} and Johnson, {W. C.}",

year = "1981",

month = dec,

doi = "10.1109/TNS.1981.4335683",

language = "English (US)",

volume = "28",

pages = "4105--4106",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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AU - Lenahan, P. M.

AU - Brower, K. L.

AU - Dressendorfer, P. V.

AU - Johnson, W. C.

PY - 1981/12

Y1 - 1981/12

N2 - Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.

AB - Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

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Radiation-induced trivalent silicon defect buildup at the si-sio2 interface in MOS structures

Abstract

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