Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon

A. N. Nazarov; V. I. Kilchytska; I. P. Barchuk; A. S. Tkachenko; S. Ashok

doi:10.1116/1.591371

Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon

A. N. Nazarov
, V. I. Kilchytska
, I. P. Barchuk
, A. S. Tkachenko
, S. Ashok

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.

Original language	English (US)
Pages (from-to)	1254-1261
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591371
State	Published - May 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591371

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title = "Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon",

abstract = "Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.",

author = "Nazarov, \{A. N.\} and Kilchytska, \{V. I.\} and Barchuk, \{I. P.\} and Tkachenko, \{A. S.\} and S. Ashok",

year = "2000",

month = may,

doi = "10.1116/1.591371",

language = "English (US)",

volume = "18",

pages = "1254--1261",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

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Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon. / Nazarov, A. N.; Kilchytska, V. I.; Barchuk, I. P. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1254-1261.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon

AU - Nazarov, A. N.

AU - Kilchytska, V. I.

AU - Barchuk, I. P.

AU - Tkachenko, A. S.

AU - Ashok, S.

PY - 2000/5

Y1 - 2000/5

N2 - Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.

AB - Positive charge was generated in the buried oxide (BOX) layer of silicon implanted by oxygen (SIMOX) silicon-on-insulator (SOI) structures by Fowler-Nordheim electron injection under high electric field. Radio-frequency plasma was employed to anneal out the positive charge. Experiments showed that the positive charge is thermally stable at annealing temperatures of up to 400 °C.

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DO - 10.1116/1.591371

M3 - Article

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SN - 1071-1023

VL - 18

SP - 1254

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon

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