Raman scattering from Si1-xGex alloy nanowires

Qiujie Lu; Kofi W. Adu; Humberto R. Gutiérrez; Gugang Chen; Kok Keong Lew; Pramod Nimmatoori; Xi Zhang; Elizabeth C. Dickey; Joan M. Redwing; Peter C. Eklund

doi:10.1021/jp074764d

Raman scattering from Si_1-xGe_x alloy nanowires

Qiujie Lu, Kofi W. Adu, Humberto R. Gutiérrez, Gugang Chen, Kok Keong Lew, Pramod Nimmatoori, Xi Zhang, Elizabeth C. Dickey, Joan M. Redwing, Peter C. Eklund

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25 Scopus citations

Abstract

We present Raman scattering results on crystalline Si_1-xGe _x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengths were in the range 80-110 nm and 15-40 μm, respectively. Three strong Raman bands were observed and identified as perturbed Si-Si (∼500 cm ^-1) modes, perturbed Ge-Ge (∼280 cm^-1) modes, and intermediate frequency (∼400 cm^-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ∼75-110 cm^-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands is similar to what is observed in bulk material and is also found to be in very good agreement with the recently calculated vibrational density of states for Si_1-xGe_x nanoparticles.

Original language	English (US)
Pages (from-to)	3209-3215
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	112
Issue number	9
DOIs	https://doi.org/10.1021/jp074764d
State	Published - Mar 6 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp074764d

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title = "Raman scattering from Si1-xGex alloy nanowires",

abstract = "We present Raman scattering results on crystalline Si1-xGe x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengths were in the range 80-110 nm and 15-40 μm, respectively. Three strong Raman bands were observed and identified as perturbed Si-Si (∼500 cm -1) modes, perturbed Ge-Ge (∼280 cm-1) modes, and intermediate frequency (∼400 cm-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ∼75-110 cm-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands is similar to what is observed in bulk material and is also found to be in very good agreement with the recently calculated vibrational density of states for Si1-xGex nanoparticles.",

author = "Qiujie Lu and Adu, {Kofi W.} and Guti{\'e}rrez, {Humberto R.} and Gugang Chen and Lew, {Kok Keong} and Pramod Nimmatoori and Xi Zhang and Dickey, {Elizabeth C.} and Redwing, {Joan M.} and Eklund, {Peter C.}",

year = "2008",

month = mar,

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doi = "10.1021/jp074764d",

language = "English (US)",

volume = "112",

pages = "3209--3215",

journal = "Journal of Physical Chemistry C",

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publisher = "American Chemical Society",

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T1 - Raman scattering from Si1-xGex alloy nanowires

AU - Lu, Qiujie

AU - Adu, Kofi W.

AU - Gutiérrez, Humberto R.

AU - Chen, Gugang

AU - Lew, Kok Keong

AU - Nimmatoori, Pramod

AU - Zhang, Xi

AU - Dickey, Elizabeth C.

AU - Redwing, Joan M.

AU - Eklund, Peter C.

PY - 2008/3/6

Y1 - 2008/3/6

N2 - We present Raman scattering results on crystalline Si1-xGe x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengths were in the range 80-110 nm and 15-40 μm, respectively. Three strong Raman bands were observed and identified as perturbed Si-Si (∼500 cm -1) modes, perturbed Ge-Ge (∼280 cm-1) modes, and intermediate frequency (∼400 cm-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ∼75-110 cm-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands is similar to what is observed in bulk material and is also found to be in very good agreement with the recently calculated vibrational density of states for Si1-xGex nanoparticles.

AB - We present Raman scattering results on crystalline Si1-xGe x nanowires (0 < x < 1) grown by the vapor-liquid-solid growth mechanism using chemical vapor deposition. Typical nanowire diameters and lengths were in the range 80-110 nm and 15-40 μm, respectively. Three strong Raman bands were observed and identified as perturbed Si-Si (∼500 cm -1) modes, perturbed Ge-Ge (∼280 cm-1) modes, and intermediate frequency (∼400 cm-1) modes assigned to Si-Ge clusters. A broad band is observed in the range ∼75-110 cm-1 that is assigned to transverse acoustic modes. The compositional dependence of these Raman bands is similar to what is observed in bulk material and is also found to be in very good agreement with the recently calculated vibrational density of states for Si1-xGex nanoparticles.

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DO - 10.1021/jp074764d

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SP - 3209

EP - 3215

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 9

ER -

Raman scattering from Si_1-xGe_x alloy nanowires

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