Raman Shifts in Electron-Irradiated Monolayer MoS2

William M. Parkin, Adrian Balan, Liangbo Liang, Paul Masih Das, Michael Lamparski, Carl H. Naylor, Julio A. Rodríguez-Manzo, A. T.Charlie Johnson, Vincent Meunier, Marija Drndić

Research output: Contribution to journalArticlepeer-review

326 Scopus citations

Abstract

We report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a red-shift in the E′ Raman peak and a less pronounced blue-shift in the A′1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy and selected-area electron diffraction, we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %). This allows us to quantitatively correlate the frequency shifts with vacancy concentration, as rationalized by first-principles density functional theory calculations. In situ device current measurements show an exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.

Original languageEnglish (US)
Pages (from-to)4134-4142
Number of pages9
JournalACS nano
Volume10
Issue number4
DOIs
StatePublished - Apr 26 2016

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Raman Shifts in Electron-Irradiated Monolayer MoS2'. Together they form a unique fingerprint.

Cite this