Abstract
This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.
Original language | English (US) |
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Title of host publication | Photonic Fiber and Crystal Devices |
Subtitle of host publication | Advances in Materials and Innovations in Device Applications XI |
Editors | Shizhuo Yin, Ruyan Guo |
Publisher | SPIE |
Volume | 10382 |
ISBN (Electronic) | 9781510612211 |
DOIs | |
State | Published - Jan 1 2017 |
Event | Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 - San Diego, United States Duration: Aug 6 2017 → Aug 7 2017 |
Other
Other | Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 |
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Country/Territory | United States |
City | San Diego |
Period | 8/6/17 → 8/7/17 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering