Rapid silicon carbide micro-crystal growth by high power CO2 laser

Haonan Zhou; Chang Jiang Chen; Wenbin Zhu; Ju Hung Chao; Shizhuo Yin

doi:10.1117/12.2276513

Rapid silicon carbide micro-crystal growth by high power CO₂ laser

Haonan Zhou, Chang Jiang Chen, Wenbin Zhu, Ju Hung Chao, Shizhuo Yin

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO₂ laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.

Original language	English (US)
Title of host publication	Photonic Fiber and Crystal Devices
Subtitle of host publication	Advances in Materials and Innovations in Device Applications XI
Editors	Shizhuo Yin, Ruyan Guo
Publisher	SPIE
Volume	10382
ISBN (Electronic)	9781510612211
DOIs	https://doi.org/10.1117/12.2276513
State	Published - Jan 1 2017
Event	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 - San Diego, United States Duration: Aug 6 2017 → Aug 7 2017

Other

Other	Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017
Country/Territory	United States
City	San Diego
Period	8/6/17 → 8/7/17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2276513

Cite this

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title = "Rapid silicon carbide micro-crystal growth by high power CO2 laser",

abstract = "This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.",

author = "Haonan Zhou and Chen, {Chang Jiang} and Wenbin Zhu and Chao, {Ju Hung} and Shizhuo Yin",

year = "2017",

month = jan,

day = "1",

doi = "10.1117/12.2276513",

language = "English (US)",

volume = "10382",

editor = "Shizhuo Yin and Ruyan Guo",

booktitle = "Photonic Fiber and Crystal Devices",

publisher = "SPIE",

address = "United States",

note = "Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017 ; Conference date: 06-08-2017 Through 07-08-2017",

}

Zhou, H, Chen, CJ, Zhu, W, Chao, JH & Yin, S 2017, Rapid silicon carbide micro-crystal growth by high power CO₂ laser. in S Yin & R Guo (eds), Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI. vol. 10382, 103820L, SPIE, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI 2017, San Diego, United States, 8/6/17. https://doi.org/10.1117/12.2276513

Rapid silicon carbide micro-crystal growth by high power CO₂ laser. / Zhou, Haonan; Chen, Chang Jiang; Zhu, Wenbin et al.
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI. ed. / Shizhuo Yin; Ruyan Guo. Vol. 10382 SPIE, 2017. 103820L.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Rapid silicon carbide micro-crystal growth by high power CO2 laser

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N2 - This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.

AB - This paper presents an ultra-fast growth of silicon carbide crystal with the size up to 50 μm from SiC nanopowders. By using a CO2 laser with a power of 30W to heat the silicon carbide nanopowders in a vacuum chamber, the nanopowders tends to congregate together to form larger particles first. Following the slow cooling process, the congregate formation would further transform to final SiC micro-crystals. The two types of final products grown from quenching process and slow cooling process were analyzed by SEM. The lattice structure of final SiC micro-crystal was determined to be hexagonal structure according to the XRD analysis.

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