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Rapid silicon carbide micro-crystal growth by high power CO
2
laser
Haonan Zhou
, Chang Jiang Chen
, Wenbin Zhu
, Ju Hung Chao
,
Shizhuo Yin
Electrical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
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Dive into the research topics of 'Rapid silicon carbide micro-crystal growth by high power CO
2
laser'. Together they form a unique fingerprint.
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Keyphrases
Crystal Growth
100%
Microcrystals
100%
Silicon Carbide
100%
High Power CO2 Laser
100%
Cooling Method
66%
Slow Cooling
66%
Congregations
66%
Vacuum Chamber
33%
Large Particle
33%
Nanopowder
33%
Lattice Structure
33%
CO2 Laser
33%
Hexagonal Structure
33%
Quenching Process
33%
XRD Analysis
33%
Ultrafast Growth
33%
Process Cooling
33%
Material Science
Carbon Dioxide
100%
Silicon Carbide
100%
Nanopowder
100%
Crystal Growth
100%
X-Ray Diffraction
33%
Scanning Electron Microscopy
33%
Crystal Structure
33%
Physics
Carbon Dioxide Laser
100%
Silicon Carbide
100%
Crystal Growth
100%
Chilling
66%
Scanning Electron Microscopy
33%
X Ray Diffraction
33%
Crystal Structure
33%
Larger Particle
33%
Engineering
Nanopowder
100%
Slow Cooling
66%
X-Ray Diffraction Analysis
33%
Final Product
33%