Abstract
The fabrication of a GaAs-on-insulator structure for which the GaAs layer is 10 nm is reported. The bonding and thinning methods employed to obtain the structure are described. The materials and dimensions of the structure are chosen so as to be relevant to fabrication of a compliant substrate. Spectrally resolved ellipsometry and high resolution X-ray reflectivity measurements were performed and compared to model calculations to assess the accuracy of the structure determination. The surface morphology of the 10 nm GaAs layer, determined by atomic force microscopy (AFM), shows the GaAs-on-insulator structures to initially have a surface morphology that is unsuitable for subsequent epitaxial growth. A method for improving the surface morphology is reported and assessed by AFM.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3506-3509 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 146 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1999 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
- Electrochemistry
- Renewable Energy, Sustainability and the Environment
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