Realization of electronic-grade two-dimensional transition metal dichalcogenides by thin-film deposition techniques

Yu Chuan Lin, Riccardo Torsi, Nicholas A. Simonson, Azimkhan Kozhakhmetov, Joshua A. Robinson

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

Defects and impurities play non-trivial roles in the functionality and device performance of two-dimensional (2D) transition metal dichalcogenides (TMD). From the optoelectronic point of view, they serve as electron scattering centers and exciton non-radiative recombination sites in 2D materials. While it is challenging to remove defects completely from monolayers, they need to be suppressed as much as possible to realize a broad range of applications in circuits, solid-state lighting, and sensing. To meet these goals, significant efforts need to be invested in understanding the growth mechanisms of 2D crystals and controlling defect formation during synthesis. In this chapter, first, we briefly discuss the challenges in synthesizing high-quality TMD and provide an overview on the thin-film deposition techniques that show a great potential for making electronic-grade 2D TMD, including powder-based and metal-organic chemical vapor deposition (CVD), as well as molecular beam epitaxy. Next, we discuss several aspects of 2D crystals growth in CVD that would impact the material quality, such as substrates, precursor dissociation dynamics, as well as nucleation and growth kinetics in detail. Finally, we review the engineering methods for controlling their heterogeneity through controlling defect type and density, heterostructure formation, and substitutional doping.

Original languageEnglish (US)
Title of host publicationDefects in Two-Dimensional Materials
PublisherElsevier
Pages159-193
Number of pages35
ISBN (Electronic)9780128202920
ISBN (Print)9780323903103
DOIs
StatePublished - Jan 1 2022

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Materials Science

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