Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Yu Chuan Lin, Bhakti Jariwala, Brian M. Bersch, Ke Xu, Yifan Nie, Baoming Wang, Sarah M. Eichfeld, Xiaotian Zhang, Tanushree H. Choudhury, Yi Pan, Rafik Addou, Christopher M. Smyth, Jun Li, Kehao Zhang, M. Aman Haque, Stefan Fölsch, Randall M. Feenstra, Robert M. Wallace, Kyeongjae Cho, Susan K. Fullerton-ShireyJoan M. Redwing, Joshua A. Robinson

Research output: Contribution to journalArticlepeer-review

165 Scopus citations


Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Original languageEnglish (US)
Pages (from-to)965-975
Number of pages11
JournalACS nano
Issue number2
StatePublished - Feb 27 2018

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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